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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The DMN3401LDW-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 0.8A at +25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 0.4Ω at VGS = 10V and 0.7Ω at VGS = 4.5V. Total power dissipation reaches 0.29W to 0.35W depending on the PCB layout. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOT363 package
- Low on-resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Motor control circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation before purchase. The suffix indicates packaging quantity and type; for example, the '-7' suffix corresponds to a 3000-unit tape and reel format. Confirm that the component meets all required environmental standards, such as RoHS compliance and halogen-free specifications, prior to integration into the final design.
Selection Notes
Select this component when a dual N-channel MOSFET is required within a 30V system. Ensure the application current remains below the 0.8A continuous limit at +25°C. Evaluate thermal resistance requirements based on the specific PCB copper area used, as junction-to-ambient resistance varies significantly between minimum pad layouts and larger copper plates.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in an SOT363 surface-mount case. The device is designed to minimize on-state resistance while maintaining superior switching performance for efficient power management applications.
Replacement Considerations
The datasheet does not list official substitute part numbers. When evaluating alternatives, verify that the replacement matches the 30V BVDSS rating, maintains similar RDS(ON) characteristics at the intended gate drive voltage, and fits the SOT363 footprint without altering pin configurations.
