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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3401LDWQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 0.8A at 25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 0.4Ω at VGS=10V and 0.7Ω at VGS=4.5V. Packaged in an SOT363 case, it includes integrated gate protection diodes for each channel.
Feature Summary
- Dual N-channel configuration with integrated ESD protected gates
- Qualified for automotive applications under AEC-Q101 standards
- Low input capacitance supporting fast switching speeds
Applications
- Motor Control
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets RoHS 3 and halogen-free requirements as defined by the manufacturer. Ensure the procurement source is authorized to guarantee compliance with IATF16949:2016 manufacturing standards required for automotive qualification.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. The SOT363 package offers space efficiency compared to single-channel alternatives. Verify that the required gate drive voltage aligns with the specified RDS(ON) characteristics at 4.5V or 10V to ensure optimal conduction performance.
Part Context
This part belongs to the DMN3401 series of dual N-channel MOSFETs from Diodes Incorporated. The 'DWQ' suffix indicates the SOT363 package and automotive-grade qualification. The '-13' suffix denotes the standard tape and reel packaging format containing 10,000 units per reel.
Replacement Considerations
Direct replacements must match the SOT363 footprint and pinout. Verify that substitute components meet the 30V BVDSS requirement and provide comparable RDS(ON) values at the target gate drive voltages. Automotive designs should prioritize parts with equivalent AEC-Q101 qualification status.
