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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.8A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 590mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
- Power - Max：290mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN3401LDWQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 0.8A at 25°C, with an on-resistance of 0.4Ω max at VGS=10V and 0.7Ω max at VGS=4.5V. Total power dissipation reaches 0.35W under specific mounting conditions. Gate threshold voltage ranges from 0.8V to 1.6V, while total gate charge is 1.2nC at VGS=10V. Input capacitance is typically 50pF.
Feature Summary
- Dual N-channel configuration in a compact SOT363 package
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low on-resistance and low input capacitance for efficient switching
- ESD protected gate structure
Applications
- Motor control circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS41997 Rev. 2-2 to confirm authenticity and specifications. Ensure that the received parts match the ordering suffix requirements for packaging quantity and type. Cross-reference the date code markings with manufacturer guidelines to validate production timelines and storage history prior to integration into designs.
Selection Notes
Select this component when designing automotive systems requiring dual N-channel switching with strict reliability standards. The AEC-Q101 qualification and IATF16949:2016 manufacturing certification make it suitable for environments demanding high thermal stability and robust performance. Consider the 30V rating and 0.8A current limit when sizing for load requirements.
Part Context
This part belongs to the DMN3401 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It shares the same core electrical characteristics as the DMN3401LDW-13 but differs in packaging quantity and automotive qualification status. The device utilizes a molded plastic case with matte tin annealed terminals over a copper lead-frame, ensuring solderability per MIL-STD-208 standards.
Replacement Considerations
The DMN3401LDW-13 is a non-automotive qualified alternative with identical electrical parameters but packaged in quantities of 10,000. When substituting, verify that the application does not require AEC-Q101 compliance or PPAP documentation. Ensure the replacement matches the SOT363 footprint and pinout configuration to maintain board compatibility.
