DMN3401LV-7

Overview

The DMN3401LV is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) rating of ±20V. The device provides a maximum static drain-source on-resistance (RDS(ON)) of 0.4Ω at VGS = 10V with an ID of 0.59A, and 0.7Ω at VGS = 4.5V with an ID of 0.2A. Continuous drain current reaches 1.1A at TA = +25°C. Total power dissipation is rated at 0.49W or 0.81W depending on the PCB copper area. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-Channel Enhancement Mode Configuration
• Low On-Resistance for High Efficiency
• Fast Switching Speed with Low Input Capacitance
• ESD Protected Gate Structure

Applications

• Motor controls
• Power management functions
• DC-DC converters
• Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's quality definitions before procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Evaluate thermal resistance values based on the specific PCB copper layout to ensure safe operation within the specified junction temperature limits.

Part Context

This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the SOT563 surface-mount package, designed to minimize on-state resistance while maintaining superior switching performance for efficient power management.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Verify pinout compatibility and electrical parameters carefully when considering alternative components.