DMN3401LVQ-7

Overview

The DMN3401LVQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 30 V and a gate-source voltage (VGS) rating of ±20 V. The device offers a typical static drain-source on-resistance (RDS(on)) of 0.16 Ω at VGS = 10 V and 0.22 Ω at VGS = 4.5 V. Continuous drain current (ID) reaches 0.8 A at +25°C and 0.7 A at +70°C, with a pulsed drain current (IDM) capability of 4.5 A. Total gate charge (Qg) is typically 0.5 nC at VGS = 4.5 V and 1.2 nC at VGS = 10 V. The component operates within a junction temperature range of -55°C to +150°C and is housed in an SOT563 package.

Feature Summary

• AEC-Q101 qualified for automotive applications with PPAP capability
• Low on-resistance and low input capacitance for efficient switching
• ESD protected gate structure
• Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

• Motor controls
• Power management functions
• DC-DC converters
• Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel size. The -7 suffix indicates a 3,000-unit reel, while the -13 suffix denotes a 10,000-unit reel. Confirm that the required package marking code matches the production date code requirements for your assembly timeline. Ensure compliance with IATF16949 manufacturing standards if the application demands specific change control protocols.

Selection Notes

Select this component when a dual N-channel configuration is required in a compact SOT563 footprint. The low RDS(on) values support efficient power handling in load switch and power management roles. Verify that the 30 V breakdown voltage provides adequate margin for the target circuit's supply rails. Consider the thermal resistance characteristics relative to the PCB copper area to ensure junction temperatures remain within the specified operating limits during continuous operation.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to meet stringent automotive reliability standards. The device integrates two independent N-channel MOSFETs into a single surface-mount package, optimizing board space while maintaining high performance for low-voltage switching applications.

Replacement Considerations

Direct pin-to-pin replacements must match the SOT563 package and electrical ratings. Verify that any substitute device maintains or exceeds the 30 V VDS rating and comparable RDS(on) specifications. Check for equivalent gate threshold voltages to ensure compatibility with existing drive circuits. Automotive-grade alternatives should also possess AEC-Q101 qualification if used in regulated vehicle systems.