ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 30V 750MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：64.3 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：470mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Download product information
Overview
The DMN3730UFB4-7B is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a maximum continuous drain current of 0.9A at 25°C and 0.73A at 70°C. The device exhibits a low on-state resistance of 460mΩ at VGS=4.5V and 560mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.45V to 0.95V, a total gate charge of 1.6nC, and a power dissipation capacity of 0.69W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Ultra-low profile 0.4mm package with a 0.6mm² footprint for space-constrained designs
- Low gate threshold voltage enabling direct battery drive capability
- ESD protected gate structure rated up to 2kV
- Qualified to AEC-Q101 standards for high reliability automotive applications
Applications
- Load Switch
- Portable Applications
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm the 10,000-unit reel quantity. Ensure compatibility with RoHS 2 and REACH directives as specified in the manufacturer's compliance statements. Confirm that the marking code 'NF' aligns with your assembly tracking requirements.
Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage switching tasks. The low RDS(on) characteristics support efficient power management in portable devices. Verify that the 30V breakdown voltage and 0.9A current rating meet the specific circuit demands without exceeding thermal limits under expected operating conditions.
Part Context
This part belongs to the DMN37 series of N-channel MOSFETs from Diodes Incorporated. It utilizes the X2-DFN1006-3 case style, which offers a significantly smaller footprint compared to traditional SOT-23 packages. The product line is designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
Replacement Considerations
Consult official Diodes Incorporated substitution guides or datasheets for verified equivalent parts. Cross-reference pinouts, voltage ratings, and package dimensions before implementation.
