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Product Detailed Parameters
- Description：MOSFET N-CH 30V 900MA SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：73 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：400mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMN3731U-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 0.9A at 25°C. The device offers low on-state resistance, specified as 460mΩ at VGS=4.5V and 560mΩ at VGS=2.5V. It operates within a temperature range of -55°C to +150°C and utilizes a SOT-23 surface-mount package.
Feature Summary
- Low gate threshold voltage enables direct driving from battery sources
- Optimized for high-efficiency power management with minimized on-state resistance
- Gate structure includes electrostatic discharge protection
Applications
- Load switching circuits
- Portable electronic applications
- Power management functions
Procurement Notes
Verify the component against official datasheet DS40980 Rev. 3-2 to confirm electrical parameters and physical dimensions. Ensure the ordering suffix matches the required reel quantity. Confirm compliance with RoHS directives and halogen-free requirements before finalizing procurement specifications.
Selection Notes
Select this component for applications requiring compact N-channel switching in portable devices. Evaluate thermal performance based on the specific PCB copper area and ambient conditions. Consider the low gate charge and threshold voltage for efficient drive circuit design.
Part Context
This part belongs to the DMN37 series of N-channel MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance in small packages suitable for space-constrained designs. The DMN3731U variant specifically targets general-purpose switching tasks.
Replacement Considerations
Consult the manufacturer's documentation for verified substitute part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package types.
