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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 1.1A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：40.8pF @ 25V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN3732UVT-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage (BVDSS) of 30V. The device provides continuous drain currents of 1.1A at +25°C and 0.9A at +70°C. Static drain-source on-resistance (RDS(ON)) is rated at 460mΩ at VGS=4.5V and 560mΩ at VGS=2.5V. Gate threshold voltage ranges from 0.45V to 0.95V, while total gate charge is 0.9nC. Power dissipation reaches 0.8W on an FR-4 substrate with a copper plate, and the operating temperature range spans -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact TSOT26 package
- Optimized for low on-state resistance and superior switching performance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Backlighting circuits
- DC-DC converters
- Power-management functions
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component meets all applicable regulatory standards required for the target application environment. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.
Selection Notes
Evaluate thermal management requirements based on the specified power dissipation limits under expected load conditions. Consider the gate threshold voltage characteristics when designing drive circuits to ensure reliable switching across the full operating temperature range. Verify compatibility with the intended PCB layout dimensions for the TSOT26 package.
Part Context
This component belongs to the DMN3732UVT series of dual N-channel MOSFETs designed for high-efficiency power management applications. It serves as a complementary solution within Diodes Incorporated's portfolio of surface-mount transistors optimized for portable electronics and compact power systems.
Replacement Considerations
An automotive-compliant variant exists under the separate datasheet designation DMN3732UVTQ. Cross-referencing with other dual N-channel MOSFETs requires careful verification of pinout configurations, maximum ratings, and electrical parameters to ensure functional equivalence.
