DMN38M1SCA10-7

Overview

The DMN38M1SCA10 is an N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a source-source breakdown voltage (BVSSS) of 30V and a typical static source-source on-resistance (RSS(ON)) of 6.7mΩ at VGS = 10V. The device supports a continuous source current of 16.0A at TA = +25°C with VGS = 10V, and a pulsed source current (ISM) of 90A. Total gate charge (Qg) is 36.7nC at VGS = 10V. Power dissipation reaches 3.0W at TA = +25°C, with a thermal resistance junction-to-ambient (RθJA) of 41.6°C/W. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

• Dual independent N-channel MOSFETs integrated into a compact X4-DSN3415-10 package for high-density power management.
• Built-in gate-source protection diode providing 1kV HBM ESD robustness.
• Designed to minimize on-state resistance while maintaining superior switching performance.

Applications

• Battery management systems
• Load switches
• Battery protections

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per carrier. Confirm that the component meets RoHS 2 and RoHS 3 directives, as well as halogen and antimony-free requirements. Ensure the procurement channel provides traceability documentation consistent with Diodes Incorporated standards.

Selection Notes

Select this component when designing circuits requiring low on-resistance in a minimal footprint. Evaluate the 30V breakdown voltage against peak transient loads. Consider the 16.0A continuous current rating and 3.0W power dissipation capabilities relative to the PCB copper area and ambient temperature conditions.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X4-DSN3415-10 surface-mount package, which measures approximately 3.37mm x 1.47mm x 0.2mm. The device is intended for applications demanding high efficiency and compact form factors.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility regarding the X4-DSN3415-10 package dimensions, pinout configuration, maximum ratings, and electrical characteristics such as RSS(ON) and BVSSS.

FAQ

What is the maximum pulsed source current supported by the DMN38M1SCA10?

The device supports a repetitive pulsed source current (ISM) of 90A at TA = +25°C, limited by junction temperature.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage (VGS(TH)) exhibits negative temperature coefficient behavior, decreasing as the junction temperature increases from -55°C to +150°C.

Is the DMN38M1SCA10 suitable for automotive applications?

For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, or manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.