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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V POWERDI333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2387 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI3333-8 (SWP) Type UX
- Package / Case：8-PowerVDFN
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Overview
The DMN39M1LFVW-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 30V and a continuous drain current (ID) of 87A at +25°C case temperature. The device achieves a low on-state resistance (RDS(ON)) of 5.0mΩ max at VGS=10V and 7.4mΩ max at VGS=4.5V. Packaged in a PowerDI3333-8 surface-mount format, it offers high thermal efficiency with a junction-to-case thermal resistance (RθJC) of 2.2°C/W.
Feature Summary
- Minimizes on-state losses through optimized low RDS(ON) design while maintaining superior switching performance.
- Utilizes a thermally efficient PowerDI3333-8 package that occupies only 33% of the board area compared to SO-8 packages.
- Compliant with RoHS directives and manufactured as a halogen-free and antimony-free green device.
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel carrier configuration. Confirm compliance requirements such as RoHS and lead-free status against project specifications. Ensure the selected component matches the required automotive or industrial qualification standards if applicable, as standard versions may differ from AEC-Q101 qualified parts.
Selection Notes
Select this component for applications requiring high-density layouts due to its compact form factor. Evaluate the thermal management strategy based on the specified junction-to-ambient and junction-to-case thermal resistances under expected load conditions. Verify gate drive voltage levels to ensure optimal RDS(ON) performance at either 4.5V or 10V operation.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for high-efficiency power management applications where minimizing conduction losses and reducing printed circuit board footprint are critical design constraints.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent part numbers. Do not substitute based solely on generic parameter matching without confirming pinout compatibility and thermal characteristics.
