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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V TO252 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17.9A (Ta), 89.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：38.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2253 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta), 65.7W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN39M1LK3-13 is a 30V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 5.5mΩ at VGS=10V and 9.0mΩ at VGS=4.5V. The device supports a continuous drain current of 89A at TC=+25°C and 17.9A at TA=+25°C. Total gate charge is 19.3nC at VGS=4.5V and 38.6nC at VGS=10V. Input capacitance is 2253pF, with a junction-to-case thermal resistance of 1.9°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features low input capacitance to support fast switching operations in DC-DC converters and industrial systems.
- Constructed with lead-free finish, RoHS compliant materials, and halogen and antimony free green compound.
Applications
- Power management functions
- DC-DC converters
- Industrial equipment
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the official datasheet. Confirm that the component meets the required environmental standards, including RoHS compliance and Halogen/Antimony-free specifications, before finalizing procurement orders.
Selection Notes
Select this component when a 30V N-channel MOSFET with low RDS(ON) is required for efficient power conversion. Ensure the application voltage does not exceed the 30V BVDSS rating. Consider the TO-252 package thermal characteristics and the need for adequate heatsinking if operating near the maximum continuous drain current limits.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated under the DiodesZetex brand. It utilizes silicon technology and is housed in a TO-252 (DPAK) surface-mount package designed for robust thermal performance and reliable operation in demanding electronic environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer or authorized distributors for cross-reference information regarding equivalent components with similar electrical ratings and package configurations.
FAQ
What is the maximum pulsed drain current for the DMN39M1LK3?
The maximum pulsed drain current (IDM) is 357 A, based on a 10μs pulse duration and a 1% duty cycle.
Is the DMN39M1LK3 suitable for automotive applications?
For automotive applications requiring specific change control, AEC-Q100/101/104/200 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities, contact Diodes Incorporated directly.
