DMN4026SSD-13

Overview

The DMN4026SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 40 V and a gate-source voltage (V_GSS) of ±20 V. The device provides a continuous drain current (I_D) of 7.0 A at +25°C, with a peak pulsed current of 70 A. The static drain-source on-resistance (R_DS(ON)) is specified as 24 mΩ max at V_GS = 10 V and 32 mΩ max at V_GS = 4.5 V. Total gate charge (Q_g) reaches 19.1 nC typ at V_GS = 10 V. Thermal resistance from junction to ambient is 98 °C/W steady state. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in an SO-8 package for compact power management designs
• Optimized low on-state resistance to minimize conduction losses
• Fast switching speed supported by low input capacitance and gate charge
• Totally lead-free and fully RoHS compliant construction

Applications

• Motor controls
• Backlighting circuits
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit reel packaging format when sourcing components. Confirm that the requested units match the manufacturer's standard packing quantity requirements. Ensure compliance with environmental directives such as RoHS 3 and halogen-free specifications during procurement validation.

Selection Notes

Select this component for applications requiring a 40 V rating with high efficiency. Evaluate the R_DS(ON) values against the system's gate drive voltage to ensure adequate current handling. Consider the thermal resistance parameters for heat dissipation planning in enclosed environments.

Part Context

This part belongs to the DMN40 series of dual N-channel MOSFETs from Diodes Incorporated. These devices are engineered to balance low on-resistance with superior switching performance. The series targets high-efficiency power management solutions across various industrial and consumer electronics sectors.

Replacement Considerations

No official substitutes are listed in the documentation. When evaluating alternatives, verify matching voltage ratings, current capabilities, and pinout compatibility. Ensure the replacement device meets the same thermal and electrical performance standards required by the original design.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 70 A, measured with a 10µs pulse duration and a 1% duty cycle.

Is the device suitable for automotive applications?

For automotive applications requiring specific change control or AEC-Q qualification, customers must contact Diodes Incorporated directly.

What is the typical turn-off fall time?

The typical turn-off fall time is 4.8 ns under test conditions of V_DD = 25V, R_L = 2.5Ω, V_GS = 10V, and R_G = 3Ω.