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The DMN4027SSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and complies with AEC-Q101 automotive standards. Key electrical parameters include a drain-source voltage of 40V, a continuous drain current of 5.4A at +70°C, and a maximum on-resistance of 47mΩ at VGS=4.5V. The device operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'Q' indicates compliance with AEC-Q101 automotive standards as documented in the manufacturer's ordering information. Confirm that the SO-8 packaging configuration matches the required tape and reel specifications for automated assembly processes.
Select this component when an automotive-grade dual N-channel MOSFET is required for low-voltage applications. Ensure the design accommodates the 40V breakdown voltage and thermal dissipation limits specified for the SO-8 package under expected operating conditions.
This part belongs to the DMN4027SSD product line from Diodes Incorporated. The 'Q' suffix specifically denotes the automotive qualification variant, distinguishing it from the standard DMN4027SSD-13 version while sharing identical electrical characteristics and pinout configurations.
The DMN4027SSD-13 serves as a direct functional equivalent without automotive qualification. Verify compatibility with other 40V dual N-channel MOSFETs in the SO-8 package only after confirming matching RDS(on) and gate charge specifications.
The absolute maximum rating for gate-source voltage is ±20V.
Yes, the DMN4027SSDQ-13 variant is qualified to AEC-Q101 standards for high reliability.
The typical forward transconductance (gfs) is 22.8 S at VDS = 15V and ID = 7A.