DMN4027SSDQ-13

DMN4027SSDQ-13

$0.37
  • Description:MOSFET 2N-CH 40V 5.4A 8SOP
  • Series:-

SKU:748dcd429f0d Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 40V 5.4A 8SOP
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:5.4A (Ta)
  • Rds On (Max) @ Id, Vgs:27mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:12.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:604pF @ 20V
  • Power - Max:1.25W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMN4027SSDQ-13

Overview

The DMN4027SSDQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and complies with AEC-Q101 automotive standards. Key electrical parameters include a drain-source voltage of 40V, a continuous drain current of 5.4A at +70°C, and a maximum on-resistance of 47mΩ at VGS=4.5V. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Qualified to AEC-Q101 standards for high reliability in automotive environments
  • Designed to minimize on-state resistance while maintaining superior switching performance
  • Totally lead-free and fully RoHS compliant

Applications

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Procurement Notes

Verify the specific ordering suffix 'Q' indicates compliance with AEC-Q101 automotive standards as documented in the manufacturer's ordering information. Confirm that the SO-8 packaging configuration matches the required tape and reel specifications for automated assembly processes.

Selection Notes

Select this component when an automotive-grade dual N-channel MOSFET is required for low-voltage applications. Ensure the design accommodates the 40V breakdown voltage and thermal dissipation limits specified for the SO-8 package under expected operating conditions.

Part Context

This part belongs to the DMN4027SSD product line from Diodes Incorporated. The 'Q' suffix specifically denotes the automotive qualification variant, distinguishing it from the standard DMN4027SSD-13 version while sharing identical electrical characteristics and pinout configurations.

Replacement Considerations

The DMN4027SSD-13 serves as a direct functional equivalent without automotive qualification. Verify compatibility with other 40V dual N-channel MOSFETs in the SO-8 package only after confirming matching RDS(on) and gate charge specifications.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for gate-source voltage is ±20V.

Is this component suitable for automotive applications?

Yes, the DMN4027SSDQ-13 variant is qualified to AEC-Q101 standards for high reliability.

What is the typical forward transconductance?

The typical forward transconductance (gfs) is 22.8 S at VDS = 15V and ID = 7A.

DMN4027SSDQ-13DMN4027SSDQ-13
$0.37
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