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Product Detailed Parameters
- Description：MOSFET N-CH 40V 9.4A TO252-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：9.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：30mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.9 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：604 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.14W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN4030LK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252 (DPAK) case with a drain voltage rating of 40V and a continuous drain current of 9.6A at +25°C ambient temperature. The device exhibits a maximum on-resistance of 30mΩ at VGS=10V and 50mΩ at VGS=4.5V. Total gate charge reaches 12.9nC at VGS=10V, supporting fast switching performance.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Qualified to JEDEC standards for high reliability and compliant with RoHS directives, containing no halogens or antimony.
- Features matte tin finish terminals annealed over a copper leadframe, ensuring solderability per MIL-STD-208.
Applications
- Backlighting
- DC-DC Converters
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the tape and reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required environmental specifications, including compliance with EU RoHS directives and the absence of halogen and antimony compounds as defined by the manufacturer's green product standards.
Selection Notes
Select this component when a low-profile surface-mount N-channel MOSFET is required for moderate current handling up to 9.6A. Ensure the application circuit provides sufficient gate drive voltage to achieve the specified low on-resistance values. Verify thermal management requirements against the junction-to-ambient resistance ratings provided for different PCB copper coverage scenarios.
Part Context
This part belongs to the DMN4030LK3 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TO-252 package designed for efficient heat dissipation in surface-mount applications. The device is intended for general-purpose switching and power management tasks where compact size and reliable operation are prioritized.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade part DMN4030LK3Q.
FAQ
What is the maximum pulsed drain current capability?
The maximum pulsed drain current is 37.7A, measured with a 10µs pulse width and a duty cycle of 1%.
Is this component suitable for automotive use?
While qualified to JEDEC standards for high reliability, an automotive-compliant version with specific change control is available under the separate datasheet for DMN4030LK3Q.
