ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 5.2A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：5.2A
- Rds On (Max) @ Id, Vgs：31mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：18.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：945pF @ 20V
- Power - Max：1.42W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The DMN4031SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 40 V drain-source breakdown voltage and supports a continuous drain current of 7 A. The device exhibits a maximum on-resistance of 31 mOhms at 10 V gate drive. It operates within a temperature range of -55 °C to +150 °C, with a power dissipation rating of 1.42 W. Key switching parameters include a gate charge of 18.6 nC, a minimum forward transconductance of 11 S, a rise time of 9.7 ns, and a fall time of 3.1 ns. The component is housed in an SOIC-8 surface-mount package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- Low on-resistance for improved power efficiency
- High thermal stability suitable for demanding environments
Applications
- DC-DC converter output stages
- Load switching applications
- Power management circuits
Procurement Notes
Verify the manufacturer part number against official Diodes Incorporated documentation to ensure authenticity. Confirm that the SOIC-8 package dimensions match the design footprint requirements. Check for RoHS compliance status through the manufacturer's environmental declarations. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to assembly.
Selection Notes
Select this component when a dual N-channel solution is required with a 40 V voltage rating. The 7 A current capability and 31 mOhm on-resistance make it suitable for moderate power switching tasks. Consider the 1.42 W power dissipation limit and thermal resistance characteristics for heat sinking requirements. Verify that the 20 V gate-source voltage rating aligns with the driving logic levels.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. The series offers various voltage and current combinations packaged in compact SOIC-8 footprints. The DMN4031SSD-13 specifically targets applications needing two independent N-channel switches in a single package, reducing board space compared to discrete components.
Replacement Considerations
No official substitutes are listed in the provided documentation. When evaluating alternatives, verify matching electrical parameters including 40 V Vds, 7 A Id, and 31 mOhm Rds(on). Ensure the replacement device supports the same SOIC-8 package and meets the -55 °C to +150 °C operating temperature range.
