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Product Detailed Parameters
- Description：MOSFET N-CH 40V 8.5A TO252-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：36mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：453 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.12W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The DMN4036LK3-13 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252-3 package with a drain-source breakdown voltage of 40V and a continuous drain current rating of 12.2A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 36mΩ at VGS=10V and 61mΩ at VGS=4.5V. It operates within a junction temperature range of -55°C to 150°C, supports a maximum gate-source voltage of ±20V, and has a total gate charge of 9.2nC at VGS=10V.
Feature Summary
- Designed for high efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Qualified to AEC-Q101 standards for automotive-grade high reliability requirements.
- Constructed as a "Green" component that is RoHS compliant and free from halogens or antimony compounds.
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the required reel size and tape width configuration before procurement. Confirm that the application environment meets the thermal dissipation requirements specified in the datasheet's derating curves. Ensure compliance with the manufacturer's life support policy restrictions if the component is intended for critical safety systems.
Selection Notes
Select this component when a low on-resistance N-channel MOSFET is required for compact surface-mount designs. The TO-252-3 package provides adequate thermal handling for moderate power levels. Consider the 40V breakdown voltage limit and the specific RDS(on) values at different gate drive voltages to ensure compatibility with the system's control logic and efficiency targets.
Part Context
This part belongs to the DMN4036LK3 product line from Diodes Incorporated. It is an N-channel enhancement mode silicon MOSFET designed specifically for minimizing conduction losses. The standard marking code for this device is 'N4036L', followed by the date code YYWW.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum pulsed drain current for the DMN4036LK3-13?
The maximum pulsed drain current (IDM) is 31.7A, measured under pulsed conditions with a duty cycle of 0.02 and a pulse width of 300µs.
How is the thermal resistance defined for this component?
The thermal resistance from junction to ambient (RθJA) is 30.3°C/W on a 50mm x 50mm FR4 PCB, and 59.0°C/W on a 25mm x 25mm FR4 PCB. The thermal resistance from junction to lead (RθJL) is 3.1°C/W.
