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Product Detailed Parameters
- Description：MOSFET BVDSS: 31V~40V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：45 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：46mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1159 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMN4060SVTQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT-26-6 surface-mount package and utilizes silicon technology. Key electrical specifications include a drain-source breakdown voltage (Vds) of 45 V, a continuous drain current (Id) of 4.3 A at ambient temperature, and a maximum power dissipation (Pd) of 1.2 W. The device operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for integrated switching applications
- Enhancement mode operation with low gate threshold voltage
- Automotive-grade reliability certified under AEC-Q101 standards
Applications
- DC-DC converter circuits
- Load switching in automotive electronics
- Power management modules
Procurement Notes
Verify the specific suffix 'Q-13' against official Diodes Incorporated documentation to confirm tape-and-reel packaging and automotive qualification status. Ensure the ordering part number matches the exact datasheet revision required for your design. Cross-reference the manufacturer's latest product change notices to validate component availability and compliance with current environmental directives before finalizing procurement.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. The TSOT-26-6 package offers space efficiency compared to larger footprints. Consider the 45 V rating and 4.3 A current capability relative to your circuit's peak load requirements. Verify that the thermal performance meets your system's heat dissipation constraints given the 1.2 W power dissipation limit.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It serves as an alternative to single-channel devices where board space is limited. The series is designed for general-purpose switching applications requiring moderate current handling and robust automotive-grade reliability.
Replacement Considerations
Check for direct substitutes such as the DMN4060SVT or other dual N-channel MOSFETs in TSOT-26 packages from Diodes Incorporated. Ensure pinout compatibility and equivalent electrical parameters like Rds(on) and Vgs(th) are matched before substitution.
