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The DMN4060SVTQ-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (Vds) of 12 V and supports a continuous drain current (Id) of 10.7 A. The device exhibits a maximum on-resistance (Rds(on)) of 41 mΩ. Packaged in a TSOT-26-6 surface-mount configuration, it operates within a temperature range of -55°C to +175°C. Key electrical parameters include a gate charge of 20 nC and a power dissipation rating of 1.73 W.
Verify the specific ordering suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure that the procurement channel provides valid traceability records. Confirm that the component meets the required automotive qualification standards before integration into final assemblies.
Select this component when a low-voltage, high-current switch is required in a compact form factor. The 12 V rating suits 12 V nominal systems. Evaluate thermal performance based on the 1.73 W dissipation limit and the specific PCB copper area available for heat spreading during operation.
This part belongs to the DiodesZetex line of discrete semiconductors designed for robust performance in demanding environments. It serves as a specialized solution for automotive and industrial sectors requiring reliable switching capabilities within strict spatial constraints.
Consult official substitution guides for compatible alternatives with matching voltage and current ratings. Verify package dimensions and pin configurations to ensure mechanical fit without redesigning the printed circuit board layout.