DMN52D0U-13

$0.04

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ef796277822b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.5 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMN52D0U-13

Overview

The DMN52D0U-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage rating of 50V and operates within a temperature range of -55°C to +150°C. The device provides a maximum on-resistance of 4.0Ω at VGS=1.8V, 2.5Ω at VGS=2.5V, and 2.0Ω at VGS=5.0V. Continuous drain current reaches 400mA at 25°C. Total gate charge is 1.5nC at VGS=10V. Input capacitance is typically 39pF. The component utilizes an SOT23 package.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Features very low gate threshold voltage to facilitate low-voltage drive compatibility.
Includes integrated ESD protection and internal gate protection diode.
Constructed as a lead-free, fully RoHS compliant, halogen-free, and antimony-free green device.

Applications

Load switches
Level switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging configuration when sourcing components. Confirm that the required operating conditions align with the specified thermal resistance values for both standard and thermally biased PCB layouts. Ensure design compliance with the manufacturer's standard terms and conditions regarding product liability and authorized sales channels.

Selection Notes

Select this component for circuits requiring a 50V breakdown voltage with moderate current handling capabilities up to 400mA. The low gate threshold voltage makes it suitable for logic-level control applications. Evaluate the thermal performance based on the specific copper pad layout and ambient temperature constraints defined in the datasheet specifications.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is housed in a compact SOT23 surface-mount package designed for space-constrained printed circuit board applications. The device represents a silicon-based technology optimized for balancing low conduction losses with fast switching dynamics.

Replacement Considerations

The DMN52D0U-7 is a verified substitute offering identical electrical characteristics but packaged in a 3,000-unit reel instead of the 10,000-unit configuration.