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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.48A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：480mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 5mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：39pF @ 25V
- Power - Max：480mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN52D0UV-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a gate-source voltage (VGSS) rating of ±12V. The device offers low on-resistance, with maximum RDS(ON) values of 4Ω at VGS=1.8V, 2.5Ω at VGS=2.5V, and 2.0Ω at VGS=5.0V. Continuous drain current (ID) reaches 480mA at +25°C. Operating temperature ranges from -55°C to +150°C. Total power dissipation is 0.48W in steady state. Input capacitance (Ciss) is typically 39pF.
Feature Summary
- Dual N-channel configuration within an ultra-small SOT563 surface mount package
- Low on-state resistance optimized for high efficiency power management applications
- Very low gate threshold voltage enabling effective switching at reduced drive voltages
- Integrated ESD protection diodes and fast switching speed characteristics
Applications
- Battery management systems
- Power management functions
- Load switches
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging format as defined in the manufacturer's documentation. Confirm RoHS compliance and halogen-free status requirements against project specifications. Ensure sourcing channels are authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage signal or power routing. Evaluate thermal constraints carefully due to the small SOT563 footprint and associated junction-to-ambient thermal resistance. Verify that the gate drive voltage meets the minimum threshold requirements for the desired on-resistance performance level.
Part Context
This part belongs to the DMN52D0UV series of dual N-channel MOSFETs. It shares the same electrical profile as the DMN52D0UV-7 variant, differing only in the standard tape-and-reel quantity. Both variants utilize the SOT563 package and are designed for space-constrained portable electronics and battery-powered devices.
Replacement Considerations
Direct functional equivalents include other dual N-channel MOSFETs in the SOT563 package with comparable 50V ratings. Verify pinout compatibility and thermal characteristics before substitution. Check datasheets for matching RDS(ON) and gate charge specifications to ensure circuit performance stability.
