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The DMN52D0UVA-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a gate-source voltage (VGSS) rating of ±12V. The device offers low on-resistance, with maximum RDS(ON) values of 4Ω at VGS=1.8V, 2.5Ω at VGS=2.5V, and 2Ω at VGS=5V. Continuous drain current (ID) reaches 480mA at +25°C. Packaged in an ultra-small SOT563 surface mount format, it includes internal gate protection diodes.
Verify the specific ordering suffix to confirm packaging quantity. The -7 suffix indicates a 3,000-unit reel, while the -13 suffix denotes a 10,000-unit reel. Confirm RoHS compliance and lead-free status directly with the manufacturer or authorized distributors prior to procurement.
Select this component for applications requiring compact dual-switching solutions. Ensure the operating gate voltage aligns with the specified thresholds for optimal RDS(ON). Verify thermal dissipation requirements against the junction-to-ambient resistance ratings provided in the datasheet for the intended PCB layout.
This part belongs to the DMN52D0UVA series of dual N-channel MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a molded plastic SOT563 package suitable for automated surface mount assembly.
No official substitute part numbers are documented in the source material. When evaluating alternatives, verify that the replacement matches the 50V BVDSS rating, SOT563 footprint, and dual N-channel configuration. Cross-compatibility claims should be avoided without direct manufacturer confirmation.
The maximum continuous gate-source voltage (VGSS) is rated at ±12V.
Yes, the DMN52D0UVA features integrated gate protection diodes for ESD protection.
The typical input capacitance (Ciss) is 39 pF, measured at VDS = 25V and VGS = 0V.