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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.48A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：480mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：39pF @ 25V
- Power - Max：480mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN52D0UVQ is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 50V drain-source voltage (BVDSS) and operates within a junction temperature range of -55°C to +150°C. The device offers low on-resistance, with maximum values of 4Ω at VGS=1.8V, 2.5Ω at VGS=2.5V, and 2Ω at VGS=5V. Continuous drain current reaches 480mA at 25°C. Packaged in an ultra-small SOT563 surface-mount format, it includes integrated gate protection diodes.
Feature Summary
- Dual N-Channel configuration with integrated gate protection diodes
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Very low gate threshold voltage of 1.0V maximum
- Low input capacitance and fast switching speed
Applications
- Battery-management systems
- Power-management functions
- Load switches
Procurement Notes
Verify the specific ordering suffix when purchasing. The DMN52D0UVQ-7 comes in a 3,000-unit reel, while the DMN52D0UVQ-13 is supplied in a 10,000-unit reel. Confirm that the component meets IATF 16949 manufacturing requirements if strict automotive change control protocols are necessary for your design.
Selection Notes
Select this component for designs requiring a compact dual N-channel solution with high reliability. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Verify thermal management capabilities against the 261°C/W junction-to-ambient resistance rating under steady-state conditions.
Part Context
This part belongs to the DMN52 series of dual N-channel MOSFETs from Diodes Incorporated. It shares the same core electrical specifications as the DMN52D0UDMQ-7 but utilizes the SOT563 package instead of the SOT26 footprint. Both variants target similar automotive-grade power management applications.
Replacement Considerations
The DMN52D0UDMQ-7 serves as a functional equivalent with identical electrical characteristics but differs in physical packaging. When substituting, verify that the PCB layout accommodates the SOT563 pinout and dimensions. No other official cross-references are documented.
