DMN52D0UVT-7

Overview

The DMN52D0UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package with a drain-source voltage (BVDSS) of 50V and a maximum continuous drain current (ID) of 430mA at +25°C. The device offers low on-state resistance, specified as 2.0Ω max at VGS = 5.0V and 2.5Ω max at VGS = 2.5V. Key electrical parameters include a gate threshold voltage range of 0.49V to 1.0V, input capacitance of 41pF, and total gate charge of 0.7nC at VGS = 4.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration in a compact TSOT26 package
• Low on-state resistance for high-efficiency power management
• Very low gate threshold voltage enabling direct logic interfacing
• Fast switching speed with low input/output leakage currents
• ESD protected and fully RoHS compliant green device

Applications

• General-purpose interfacing switches
• Power-management functions
• High-efficiency portable applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging format when sourcing components. Confirm that the requested part matches the exact document number DS44923 Rev. 2 - 2 to ensure compatibility with design specifications. Check for any regional distribution restrictions or environmental compliance documentation required for your specific manufacturing location before finalizing procurement orders.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in ultra-small packages. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired on-resistance levels, particularly at lower voltages like 1.8V or 2.5V. Consider the thermal resistance characteristics and power dissipation limits when designing the PCB layout to maintain safe operating temperatures under continuous load conditions.

Part Context

This part belongs to the DMN52D0UVT series of dual N-channel enhancement mode MOSFETs. It shares similar electrical characteristics with other variants in the family but differs in packaging and tape-and-reel quantities. The TSOT26 package provides a space-saving solution compared to larger transistor packages while maintaining adequate thermal performance for low-power switching applications.

Replacement Considerations

Direct substitutes may include other dual N-channel MOSFETs in TSOT26 packages with comparable BVDSS and ID ratings. Verify pinout compatibility and electrical parameter overlaps before implementation. Alternative packages such as SOT363 or X1-DFN1006-3 may require schematic redesign due to different pin configurations and thermal properties.

FAQ

What is the maximum continuous drain current for the DMN52D0UVT-7?

The maximum continuous drain current is 430mA at an ambient temperature of +25°C.

Does the DMN52D0UVT-7 have built-in body diodes?

Yes, the internal schematic shows two independent N-channel MOSFETs, each with a built-in body diode between the source and drain terminals.

What is the typical input capacitance of this device?

The typical input capacitance (Ciss) is 41pF, measured at VDS = 25V, VGS = 0V, and f = 1.0MHz.