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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.43A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：41pF @ 25V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN52D0UVTQ-7 is a dual N-channel enhancement mode MOSFET in a TSOT26 package. It features a drain-source voltage of 50V and low on-resistance values of 2.0Ω at VGS=5.0V, 2.5Ω at VGS=2.5V, and 4.0Ω at VGS=1.8V. Continuous drain current reaches 430mA at 25°C. The device includes an internal body diode with a forward voltage of 1.2V max. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Dual N-channel configuration in compact TSOT26 package
- Low gate threshold voltage for efficient logic-level driving
- Totally lead-free and fully RoHS compliant
Applications
- General-purpose interfacing switches
- Power-management functions
- Automotive load switching applications
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against the required reel quantity before procurement. Confirm that the component meets AEC-Q101 qualification requirements if used in automotive contexts. Ensure the design accounts for the thermal resistance characteristics provided in the datasheet under actual mounting conditions.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a small surface-mount package. The low gate threshold voltage makes it suitable for applications driven by lower voltage logic signals. Verify that the continuous drain current and power dissipation limits meet the specific circuit requirements under expected operating temperatures.
Part Context
This part belongs to Diodes Incorporated's DMN series of dual N-channel MOSFETs. It is designed to provide high efficiency in power management circuits while occupying minimal board space. The TSOT26 package allows for automated assembly and is suitable for dense PCB layouts.
Replacement Considerations
Check pinout compatibility and electrical parameters such as RDS(ON) and BVDSS when considering substitutes. Ensure any replacement also meets AEC-Q101 requirements if used in automotive applications.
FAQ
Is the DMN52D0UVTQ-7 suitable for automotive applications?
Yes, the device is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
What is the maximum gate-source voltage rating?
The maximum continuous gate-source voltage is ±12V.
Does the device include protection against electrostatic discharge?
Yes, the datasheet lists ESD protection as one of its features.
