DMN52D0UWQ-13

$0.04

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:b1561b672828 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 5V
Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：39 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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DMN52D0UWQ-13

Overview

The DMN52D0UWQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 50V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of 380mA at 25°C, with an on-resistance of 2Ω at VGS=5V. Packaged in SOT323, it includes an integrated gate protection diode.

Feature Summary

AEC-Q101 qualified for automotive reliability standards
Integrated gate protection diode for enhanced robustness
Low input capacitance supporting fast switching speeds
Totally lead-free and fully RoHS compliant construction

Applications

Load switches
Level switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if utilized in automotive contexts. Ensure design compliance with IATF 16949 manufacturing facility standards. Validate thermal management strategies against the specified junction-to-ambient resistance values.

Selection Notes

Select this component for applications requiring low-voltage switching with minimal power dissipation. The low gate threshold voltage facilitates compatibility with various logic levels. Consider the SOT323 package constraints regarding thermal performance and physical footprint limitations during circuit board layout planning.

Part Context

This part belongs to the DMN52 series of N-channel MOSFETs designed for automotive-grade applications. It is manufactured in IATF 16949 certified facilities and supports PPAP documentation. The product line emphasizes low on-resistance and high efficiency for portable and automotive electronics.

Replacement Considerations

Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully before implementation.