DMN53D0LDW-13

$0.26

Description：MOSFET 2N-CH 50V 0.36A SOT363
Series：-

SKU:c312fb98e5d5 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.36A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：360mA
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：46pF @ 25V
Power - Max：310mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMN53D0LDW-13

Overview

The DMN53D0LDW-13 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 50 V and a continuous drain current (ID) of 360 mA at +25°C. The device offers a low on-state resistance (RDS(ON)) of 1.6 Ω at VGS = 10V and 2.5 Ω at VGS = 4.5V. Total power dissipation is rated at 310 mW, with an operating junction temperature range from -55°C to +150°C. It utilizes a SOT363 surface-mount package.

Feature Summary

Dual N-channel configuration for compact circuit integration
Low on-state resistance optimized for high-efficiency power management
Fast switching speed with low input capacitance
ESD protection rated up to 2kV

Applications

DC-DC converters
Power-management functions
Battery operated systems
Solid-state relays
Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the standard tape and reel packaging quantity of 10,000 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 2 and RoHS 3 directives, including compliance with EU Directive 2002/95/EC and 2015/863/EU. Ensure the procurement channel is authorized to guarantee product authenticity and adherence to standard terms and conditions of sale.

Selection Notes

Select this component when a dual N-channel MOSFET is required within a 50V rating and small SOT363 footprint. Consider the RDS(ON) specifications at both 10V and 4.5V gate drive voltages to ensure compatibility with the system logic levels. Evaluate the thermal resistance of 411 °C/W against the application's ambient temperature constraints to maintain operation within the specified -55°C to +150°C junction temperature range.

Part Context

This part belongs to the DMN53 series of dual N-channel enhancement mode field effect transistors produced by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. An automotive-compliant version of this device is available under the separate datasheet designation DMN53D0LDWQ.

Replacement Considerations

The automotive-compliant variant DMN53D0LDWQ serves as a qualified alternative for applications requiring automotive standards. Verify pinout compatibility and electrical parameter equivalence before substitution.