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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.46A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：460mA (Ta)
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：49.5pF @ 25V
- Power - Max：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN53D0LDWQ-7 is a dual N-channel enhancement mode MOSFET designed for automotive applications. It features a 50V drain-source voltage rating and operates within a temperature range of -55°C to +150°C. The device offers low on-resistance, with maximum values of 1.6Ω at VGS=10V and 2.5Ω at VGS=4.5V. Continuous drain current reaches 0.46A at 25°C. Packaged in an SOT363 surface-mount case, it includes internal gate protection diodes.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low input capacitance and fast switching speed characteristics
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) to confirm the reel quantity matches your production requirements. Confirm that the component meets the required IATF 16949 manufacturing standards if strict automotive change control protocols are necessary for your assembly line.
Selection Notes
Select this component when a compact dual N-channel solution is required for automotive environments. Ensure the design accommodates the thermal resistance limits and verify that the gate drive voltage aligns with the specified RDS(ON) performance curves for optimal efficiency.
Part Context
This part belongs to the DMN53D0L series from Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic SOT363 case. The device is manufactured in IATF 16949 certified facilities, ensuring consistency for high-reliability electronic assemblies.
Replacement Considerations
DMN53D0LDW-7
FAQ
Does the DMN53D0LDWQ include internal protection?
Yes, the datasheet indicates the presence of internal gate protection diodes connected to each channel.
What is the maximum junction temperature?
The operating and storage temperature range extends up to a maximum junction temperature of +150°C.
Is this component suitable for automotive use?
Yes, it is qualified to AEC-Q101, supports PPAP, and is manufactured in IATF 16949 certified facilities.
