DMN53D0LQ-7

Overview

The DMN53D0LQ-7 is a single N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 50 V and a gate-source voltage (V_GSS) of ±20 V. The device provides a continuous drain current (I_D) of 500 mA at +25°C. Static drain-source on-resistance (R_DS(ON)) is specified as 1.6 Ω at V_GS = 10 V with I_D = 500 mA, and 2.5 Ω at V_GS = 4.5 V with I_D = 200 mA. The gate threshold voltage (V_GS(TH)) ranges from 0.8 V to 1.5 V. Total power dissipation (P_D) is 370 mW on a standard FR-4 board. Operating and storage temperature range spans from -55°C to +150°C.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency applications.
• Features very low gate threshold voltage and low input capacitance for fast switching speed.
• Includes ESD protection rated up to 2 kV.
• Qualified for automotive applications under AEC-Q101 standards and capable of PPAP submission.

Applications

• High-efficiency power-management circuits
• Automotive electronic systems requiring specific change control

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS38552 Rev. 4-2 to confirm electrical parameters and package dimensions. Ensure the ordering suffix matches the required packing quantity, such as -7 for 3,000 units or -13 for 10,000 units in tape and reel format. Confirm compliance with RoHS directives and halogen-free requirements if applicable to your manufacturing process.

Selection Notes

Select this component when a compact SOT23 packaged MOSFET is needed for low-voltage switching applications. The 50 V rating and 500 mA current capability suit general-purpose signal and power switching tasks. Consider the thermal resistance characteristics and power dissipation limits relative to the PCB copper area and ambient operating conditions during circuit design.

Part Context

This part belongs to the DMN53D0LQ series of N-channel enhancement mode field effect transistors produced by Diodes Incorporated. It utilizes silicon technology and is housed in a surface-mount SOT23 package. The device is designed for lead-free assembly and meets UL flammability classification rating 94V-0 for the molded plastic material.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Verify that any alternative component matches the 50 V drain-source voltage, 500 mA drain current, and SOT23 package footprint before implementation.

FAQ

What is the maximum junction temperature for the DMN53D0LQ-7?

The maximum junction temperature (T_J) and storage temperature (T_STG) range from -55°C to +150°C.

Is the DMN53D0LQ-7 suitable for automotive applications?

Yes, the DMN53D0LQ-7 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.