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Product Detailed Parameters
- Description：MOSFET BVDSS: 41V~60V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：46 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN53D0LTQ-13 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 50V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 350mA at 25°C, with a maximum power dissipation (PD) of 300mW. Static drain-source on-resistance (RDS(ON)) is specified as 1.6Ω at VGS = 10V and ID = 500mA, or 2.5Ω at VGS = 4.5V and ID = 200mA. The component utilizes a SOT523 surface mount package.
Feature Summary
- AEC-Q101 qualified for automotive applications with PPAP capability
- Ultra-small SOT523 surface mount package design
- Totally lead-free and fully RoHS compliant construction
- Integrated gate protection diode structure
Applications
- Motor driving circuits
- Power management functions
- Load switching applications
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel configuration when sourcing components. Confirm that the required automotive qualification standards, including AEC-Q101 compliance and PPAP documentation, are explicitly supported by the supplier for this exact part number variant before finalizing procurement agreements.
Selection Notes
Select this component for designs requiring a compact N-channel MOSFET suitable for automotive environments. Ensure the application logic aligns with the low gate threshold voltage characteristics and verify that the thermal constraints fit within the 300mW power dissipation limit in the SOT523 package. Evaluate the 50V breakdown rating against circuit voltage spikes.
Part Context
This device belongs to the DMN53D0LTQ series of N-channel enhancement mode field effect transistors produced by Diodes Incorporated. The product line is engineered to meet stringent automotive industry requirements, featuring high reliability standards and small form factor packaging options designed for space-constrained electronic assemblies.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully if considering alternative suppliers.
