DMN53D0LV-7

Overview

The DMN53D0LV-7 is a dual N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 350mA at +25°C. The device offers low on-state resistance, specified as 1.6Ω at VGS = 10V and 2.5Ω at VGS = 4.5V. Total power dissipation is rated at 430mW with a thermal resistance junction-to-ambient of 294°C/W. Operating temperature ranges from -55°C to +150°C. The component utilizes an SOT563 surface-mount package.

Feature Summary

• Dual N-channel configuration designed for high-efficiency power management applications
• Low gate threshold voltage enabling operation with low drive signals
• Fast switching speed supported by low input capacitance
• ESD protection rated up to 2kV

Applications

• High-efficiency power-management circuits
• Battery-powered portable devices
• General-purpose load switching

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the selected variant meets all required environmental standards, including RoHS compliance and halogen-free status, prior to final procurement decisions.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. Ensure the application logic levels align with the specified gate threshold voltage range. Verify that the thermal constraints of the target PCB layout can accommodate the junction-to-ambient thermal resistance rating under expected operating conditions.

Part Context

This part belongs to the DMN53 series of dual N-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other members of the family but differs in package type and specific parameter tolerances. The SOT563 package provides a small footprint suitable for space-constrained designs compared to larger discrete packages.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related Q-suffix parts listed in the manufacturer's automotive product catalog. Direct substitutes must match the SOT563 package and 50V/350mA ratings.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGSS) is ±20V.

Is the device qualified for automotive use?

This specific part is qualified to JEDEC standards for high reliability. For automotive applications requiring AEC-Q qualification, customers should consult the related Q-suffix parts.

What is the typical turn-on delay time?

The typical turn-on delay time (tD(on)) is 2.7ns under test conditions of VDD = 30V, VGS = 10V, RG = 25Ω, and ID = 200mA.