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Product Detailed Parameters
- Description：MOSFET N-CH 50V 360MA SOT323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 270mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：45.8 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMN53D0LW-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 50 V and a continuous drain current (I_D) of 360 mA at +25°C. The device offers a typical static drain-source on-resistance (R_DS(ON)) of 0.73 Ω at V_GS = 10 V and 0.77 Ω at V_GS = 5 V. Total gate charge (Q_g) is typically 1.2 nC at V_GS = 10 V. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT-323 surface-mount package.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- DC-DC converters
- Power-management functions
- Battery operated systems
- Solid-state relays
- Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the standard SOT-323 package packed in tape and reel carriers containing 10,000 units per carrier. Confirm that the component meets RoHS, lead-free, halogen-free, and antimony-free requirements as specified in the manufacturer's documentation. Ensure compatibility with JEDEC standards for high reliability applications.
Selection Notes
Select this component when designing circuits requiring a compact N-channel MOSFET with a 50 V breakdown voltage and logic-level gate drive capability. The low R_DS(ON) makes it suitable for minimizing conduction losses in battery-operated systems. Consider the thermal characteristics and safe operating area (SOA) limits when determining heat dissipation requirements for steady-state or pulsed operation.
Part Context
This part belongs to the DMN53D0L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN53D0LW variant specifically utilizes the SOT-323 package, providing a small footprint suitable for space-constrained portable electronics and solid-state relay applications.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters against alternative single N-channel MOSFETs in the SOT-323 package before substitution.
