DMN55D0UT-7

$0.16

Description：MOSFET N-CH 50V 160MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6ced95c22022 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 160MA SOT-523
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
Rds On (Max) @ Id, Vgs：4Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN55D0UT-7

Overview

The DMN55D0UT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 50V and a continuous drain current (ID) of 160mA. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 4Ω at VGS = 4V and 5V at VGS = 2.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT523 package.

Feature Summary

Low on-resistance for high efficiency power management
Very low gate threshold voltage
ESD protected gate up to 2kV
Totally lead-free and fully RoHS compliant

Applications

Motor driving
Power management functions
Load switching

Procurement Notes

Verify the component datasheet revision and specific electrical parameters against official Diodes Incorporated documentation before integration. Confirm that the SOT523 package dimensions and thermal characteristics align with your PCB layout requirements. Ensure compliance with applicable environmental directives such as RoHS 3 and REACH standards for your target market.

Selection Notes

Select this component for applications requiring compact surface-mount solutions with moderate voltage ratings. Consider the 4Ω RDS(ON) specification when designing for low-current load switching or power management tasks. Evaluate the ESD protection level and thermal resistance if operating in environments with limited airflow or higher ambient temperatures.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is intended for general-purpose applications where space constraints and efficiency are critical design factors.