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Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.305A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：305mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：400mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The DMN5L06DMK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 50V and a continuous drain current of 305mA at 25°C ambient temperature. The device exhibits a gate threshold voltage of 1V at 250µA and an on-resistance of 2Ω at 50mA with 5V gate drive. Maximum power dissipation is rated at 250mW, and the unit operates within a junction temperature range of -55°C to 150°C. It is housed in an ultra-small SOT-363 surface-mount package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Low gate threshold voltage enabling logic-level compatibility
- Ultra-small surface-mount package suitable for high-density layouts
- ESD protection up to 2kV for enhanced reliability
Applications
- Battery management systems
- Portable consumer electronics
- Signal switching circuits
- Power management modules
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm pinout and electrical tolerances. Ensure compliance with RoHS and AEC-Q101 standards if automotive qualification is required. Confirm package integrity and moisture sensitivity levels prior to assembly to prevent soldering defects during reflow processes.
Selection Notes
Select this component for applications requiring dual N-channel switching in minimal footprint designs. The low gate threshold voltage supports operation with low-voltage logic controllers. Evaluate thermal constraints carefully due to the limited power dissipation rating inherent to the small package size. Compare input capacitance values against switching speed requirements for high-frequency performance optimization.
Part Context
This part belongs to the DMN5L06 series of dual N-channel MOSFETs from Diodes Incorporated. The series is designed for portable applications where board space is critical. The DMK suffix typically denotes the SOT-363 packaging variant. This family emphasizes low on-resistance and fast switching capabilities for efficient power handling in compact devices.
Replacement Considerations
Cross-reference with DMN5L06DWK-7 for identical functional specifications in the same package. Verify pin compatibility before substituting with other dual N-channel MOSFETs from different manufacturers. Ensure voltage and current ratings meet or exceed original design requirements.
