DMN5L06DW-7

$0.15

Description：MOSFET 2N-CH 50V 0.28A SOT363
Series：-

SKU:f1c126accdd6 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.28A SOT363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：280mA
Rds On (Max) @ Id, Vgs：3Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：200mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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DMN5L06DW-7

Overview

The DMN5L06DW-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It operates with a drain-source voltage of 50 V and a continuous drain current of 280 mA. The device features a maximum static drain-source on-resistance of 4 Ω at VGS = 1.8V and ID = 50mA, or 3 Ω at VGS = 2.7V and ID = 0.2A. Total power dissipation is rated at 200 mW. The component utilizes an SOT-363 surface mount package.

Feature Summary

Dual N-channel MOSFET configuration
Low on-resistance characteristics
Very low gate threshold voltage
Fast switching speed

Applications

Battery protection circuits
Power management applications
Load switching

Procurement Notes

Verify the specific ordering suffix '-7' to confirm tape and reel packaging quantities as documented in official manufacturer datasheets. Ensure that the requested part number matches the exact electrical specifications and package dimensions required for the design. Confirm RoHS compliance status through the latest product documentation provided by the supplier.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching tasks. The SOT-363 package provides space efficiency for dense PCB layouts. Evaluate the on-resistance values against the expected load currents to ensure thermal performance remains within the specified power dissipation limits during operation.

Part Context

This component belongs to the DMN series of dual N-channel enhancement mode field effect transistors from Diodes Incorporated. These devices are designed for general-purpose switching applications requiring small form factors. The series offers various voltage and current ratings to suit different power management needs while maintaining compatibility with standard surface mount assembly processes.

Replacement Considerations

Consult official manufacturer cross-reference lists for verified substitute part numbers. Ensure any replacement maintains identical pinout configurations, voltage ratings, and package dimensions to guarantee functional compatibility without redesigning the circuit board layout.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.