ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The DMN5L06VAK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50 V and a continuous drain current (Id) of 280 mA at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 3 Ω at Vgs = 10 V and Id = 100 mA, with a gate threshold voltage (Vgs(th)) of 1 V at Id = 250 µA. Maximum power dissipation is 250 mW. It operates within a temperature range of -55°C to +150°C junction temperature and utilizes an SOT-563 surface-mount package.
Feature Summary
- Dual N-channel configuration integrating two independent transistors in a single compact package
- Low gate threshold voltage enabling efficient drive from low-voltage logic interfaces
- Ultra-small surface-mount footprint designed for high-density board layouts
- ESD protection rated up to 2 kV Human Body Model
Applications
- Battery-powered portable devices requiring space-efficient switching
- Load switching applications in mobile phones and handheld electronics
- Power management circuits in consumer gadgets
- General-purpose signal switching in low-power systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and electrical tolerances. Ensure the component meets RoHS compliance requirements for your target market. Confirm that the SOT-563 package dimensions align with your PCB footprint design rules before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. The 50 V rating suits low-voltage DC systems. Verify that the 3 Ω on-resistance meets the voltage drop requirements of your specific load. Consider the 280 mA current limit for appropriate thermal management in enclosed designs.
Part Context
This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated. It serves as a compact alternative to discrete single-transistor arrangements. The SOT-563 package provides six pins, allowing for shared source connections or independent configurations. It complements other DMN variants offering different voltage or current ratings.
Replacement Considerations
Direct substitutes include DMN5L06VK-7 and DMN5L06VA-7. Verify pinout consistency and exact Rds(on) specifications before substitution. Cross-reference package dimensions to ensure mechanical fit. Confirm that thermal characteristics match the original design constraints.
