ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 50V 0.28A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：280mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
Download product information
Overview
The DMN5L06VK-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a SOT-563 surface-mount package with six pins. The device features a drain-source breakdown voltage of 50 V and a continuous drain current rating of 280 mA. Key electrical characteristics include a maximum on-resistance of 3 Ohms, a gate-source voltage range of -40 V to +40 V, and a power dissipation capacity of 250 mW. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Dual isolated N-channel configuration for independent control
- Enhancement mode operation with low threshold voltage
- Compact SOT-563 surface-mount packaging
Applications
- Low-power signal switching circuits
- Battery protection modules
- Portable electronic device load switches
Procurement Notes
Verify the specific suffix against official Diodes Incorporated documentation to confirm pinout and electrical tolerances. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and avoid counterfeit components during sourcing.
Selection Notes
Select this component for applications requiring dual N-channel isolation in a minimal footprint. The 50 V rating suits low-voltage systems, while the 280 mA current capability supports moderate load switching. Consider the 3 Ohm on-resistance for efficiency constraints in battery-operated designs where leakage and conduction losses are critical factors.
Part Context
This part belongs to the DiodesZetex discrete semiconductor portfolio, specifically within the N-channel MOSFET category. It is designed for general-purpose switching applications in consumer electronics. The SOT-563 package allows for high-density PCB layouts, making it suitable for space-constrained mobile and wearable devices.
Replacement Considerations
The DMN5L06VAK-7 is a documented equivalent variant within the same product family. Verify pin compatibility and exact electrical parameter alignment before substitution.
