DMN5L06VKQ-13

Overview

The DMN5L06VKQ-13 is a dual N-channel enhancement mode MOSFET in an SOT563 package. It features a drain-source voltage of 50V and a maximum power dissipation of 250mW at 25°C. The on-state resistance is specified as 2Ω max at VGS=5V with 280mA current, 2.5Ω max at VGS=2.5V with 258mA, and 3Ω max at VGS=1.8V with 235mA. The gate threshold voltage is 1.0V max at ID=250µA. Input capacitance is 50pF max at VDS=25V.

Feature Summary

• Dual N-channel configuration for general purpose interfacing switches
• Low on-resistance with very low gate threshold voltage
• Fast switching speed and low input/output leakage
• ESD protected up to 2kV

Applications

• General purpose interfacing switches
• High efficiency power management applications

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity. The -13 suffix indicates a tape and reel carrier with 10,000 units per reel. Confirm that the component meets AEC-Q101 qualification requirements if automotive application standards are necessary for the design.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching. The SOT563 package provides an ultra-small surface mount footprint suitable for space-constrained designs. Ensure the drive voltage aligns with the specified RDS(ON) thresholds for optimal performance.

Part Context

This device belongs to the DMN series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The part is qualified to AEC-Q101 standards and is produced in IATF 16949 certified facilities.

Replacement Considerations

The datasheet explicitly states this part is not recommended for new design. Verify compatibility with existing layouts if substituting. No direct public substitute part numbers are documented in the provided source material.