DMN5L06VKQ-7

DMN5L06VKQ-7

$0.10
  • Description:MOSFET 2N-CH 50V 0.28A SOT563
  • Series:-

SKU:c40d9fa4cceb Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 50V 0.28A SOT563
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
  • Rds On (Max) @ Id, Vgs:2Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
  • Power - Max:250mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:Automotive
  • Qualification:AEC-Q101

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DMN5L06VKQ-7

Overview

The DMN5L06VKQ-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 50V and a continuous drain current (Id) of 305mA at 25°C. The device exhibits a gate-source threshold voltage of 1V at 250uA and a typical on-resistance of 2Ω at 50mA with a 5V gate drive. Maximum power dissipation is rated at 250mW at an ambient temperature of 25°C. The component utilizes an SOT363 surface-mount package and is qualified to AEC-Q101 standards for automotive reliability.

Feature Summary

  • Dual N-Channel Configuration
  • Low On-Resistance
  • Very Low Gate Threshold Voltage
  • Fast Switching Speed

Applications

  • Automotive electronics systems
  • Industrial control circuits
  • Computing hardware interfaces
  • Consumer electronic devices

Procurement Notes

Verify the specific suffix 'Q' indicates AEC-Q101 automotive qualification status as per official documentation. Confirm the package type matches the required SOT363 footprint for PCB layout compatibility. Ensure the ordering quantity aligns with manufacturer reel specifications. Cross-reference the exact part number against the latest datasheet revision to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when dual N-channel switching is required in space-constrained designs. The low gate threshold voltage facilitates drive from low-voltage logic sources. The AEC-Q101 qualification makes it suitable for automotive environments requiring high reliability. Consider the 250mW power dissipation limit for thermal management planning in enclosed applications.

Part Context

This part belongs to Diodes Incorporated's DMN series of dual MOSFETs. These components are designed for general-purpose switching applications. The series offers various voltage and current ratings within compact packages. The DMN5L06VKQ-7 specifically targets applications needing dual channels with moderate voltage handling capabilities.

Replacement Considerations

Check for direct substitutes within the same DMN series offering identical pinouts and electrical characteristics. Verify that any replacement maintains the AEC-Q101 qualification if automotive use is intended. Ensure the alternative component supports the SOT363 package form factor for board compatibility.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (Vdss) is 50V.

Is this component qualified for automotive applications?

Yes, it is qualified to AEC-Q101 standards for high reliability.

What is the package type?

It uses an ultra-small SOT363 surface-mount package.

DMN5L06VKQ-7DMN5L06VKQ-7
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