DMN6017SFV-7

DMN6017SFV-7

$0.95
  • Description:MOSFET N-CH 60V 35A POWERDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:506b84f19d94 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 35A POWERDI3333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2711 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerDI3333-8 (Type UX)
  • Package / Case:8-PowerVDFN

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DMN6017SFV-7

Overview

The DMN6017SFV-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) surface-mount package. It features a drain-source breakdown voltage of 60 V and a maximum continuous drain current of 35 A at +25°C case temperature. The device offers a low on-state resistance of 18 mΩ at VGS = 10V and 20 mΩ at VGS = 4.5V. Key dynamic characteristics include a total gate charge of 55 nC at VGS = 10V, turn-on delay time of 4.9 ns, and turn-off fall time of 11 ns. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
  • Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
  • Totally lead-free and fully RoHS compliant, with halogen and antimony free "Green" device construction.

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix when purchasing. The DMN6017SFV-7 variant comes packaged in tape and reel quantities of 2,000 units. Confirm that the required packaging format aligns with your assembly line equipment specifications before placing orders to ensure compatibility with automated pick-and-place processes.

Selection Notes

Select this component for designs requiring a compact footprint without sacrificing current handling capabilities. The low RDS(ON) values support efficient power conversion in space-constrained environments. Ensure thermal management strategies account for the junction-to-ambient resistance characteristics provided in the datasheet to maintain reliability under varying load conditions.

Part Context

This part belongs to Diodes Incorporated's lineup of silicon N-channel MOSFETs designed for general-purpose switching. It utilizes the PowerDI® series of molded plastic packages which provide robust mechanical protection and improved thermal dissipation compared to traditional leaded packages. The product summary highlights its suitability for modern electronics where board space optimization is critical.

Replacement Considerations

Check for direct substitutes within the same PowerDI3333-8 family or other manufacturers offering identical pinouts and electrical ratings. Verify that any replacement maintains the same 60V rating and comparable RDS(ON) specifications to ensure circuit performance remains unchanged during retrofitting or supply chain adjustments.

FAQ

What is the maximum pulsed drain current for the DMN6017SFV-7?

The maximum pulsed drain current is 140 A, based on a 10µs pulse duration with a 1% duty cycle.

Does the DMN6017SFV-7 have an internal body diode?

Yes, it includes an intrinsic body diode with a maximum continuous forward current of 20 A and a typical forward voltage of 0.7 V at 1 A source current.

DMN6017SFV-7DMN6017SFV-7
$0.95
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