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The DMN6017SFV-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) surface-mount package. It features a drain-source breakdown voltage of 60 V and a maximum continuous drain current of 35 A at +25°C case temperature. The device offers a low on-state resistance of 18 mΩ at VGS = 10V and 20 mΩ at VGS = 4.5V. Key dynamic characteristics include a total gate charge of 55 nC at VGS = 10V, turn-on delay time of 4.9 ns, and turn-off fall time of 11 ns. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix when purchasing. The DMN6017SFV-7 variant comes packaged in tape and reel quantities of 2,000 units. Confirm that the required packaging format aligns with your assembly line equipment specifications before placing orders to ensure compatibility with automated pick-and-place processes.
Select this component for designs requiring a compact footprint without sacrificing current handling capabilities. The low RDS(ON) values support efficient power conversion in space-constrained environments. Ensure thermal management strategies account for the junction-to-ambient resistance characteristics provided in the datasheet to maintain reliability under varying load conditions.
This part belongs to Diodes Incorporated's lineup of silicon N-channel MOSFETs designed for general-purpose switching. It utilizes the PowerDI® series of molded plastic packages which provide robust mechanical protection and improved thermal dissipation compared to traditional leaded packages. The product summary highlights its suitability for modern electronics where board space optimization is critical.
Check for direct substitutes within the same PowerDI3333-8 family or other manufacturers offering identical pinouts and electrical ratings. Verify that any replacement maintains the same 60V rating and comparable RDS(ON) specifications to ensure circuit performance remains unchanged during retrofitting or supply chain adjustments.
The maximum pulsed drain current is 140 A, based on a 10µs pulse duration with a 1% duty cycle.
Yes, it includes an intrinsic body diode with a maximum continuous forward current of 20 A and a typical forward voltage of 0.7 V at 1 A source current.