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Product Detailed Parameters
- Description：2N7002 FAMILY SOT523 T&R 3K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：356mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：2Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：47 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN601LTQ-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 60V and a continuous drain current of 356mA at +25°C. The device exhibits a maximum on-resistance of 2Ω at VGS=10V and 3Ω at VGS=5V. It operates within a temperature range of -55°C to +150°C, with a total power dissipation of 400mW. Packaged in an SOT523-3 surface-mount format, it includes gate protection and meets AEC-Q101 automotive standards.
Feature Summary
- Qualified to AEC-Q101 standards for high reliability and suitable for automotive applications requiring specific change control.
- Features low on-resistance, low gate threshold voltage, and fast switching speed for efficient power management.
- Includes ESD protected gate and low input/output leakage characteristics.
- Manufactured in IATF 16949 certified facilities with PPAP capability.
Applications
- Motor controls
- Power-management functions
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS45979 Rev. 2-2 to confirm electrical parameters and package dimensions. Ensure the supplier provides traceability documentation required for AEC-Q101 qualified parts. Confirm that the received units match the specified SOT523 package and marking codes before integration into automotive-grade designs.
Selection Notes
Select this component for designs requiring a compact N-channel MOSFET with automotive qualification. The SOT523 package suits space-constrained layouts. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions, as power dissipation capabilities vary significantly between minimum pad layouts and larger copper plates.
Part Context
This part belongs to the DMN601LTQ family of 60V N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is intended for high-efficiency power management applications where small form factors and automotive reliability are critical requirements.
Replacement Considerations
Consult the manufacturer's official substitution guide or contact Diodes Incorporated directly for verified replacement options. Do not assume cross-compatibility with other 60V N-channel MOSFETs without verifying pinout, electrical limits, and package compatibility.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 356mA at an ambient temperature of +25°C.
Is this component suitable for automotive applications?
Yes, the DMN601LTQ is qualified to AEC-Q101 standards and is manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.
