DMN601TKQ-7

$0.04

Description：2N7002 FAMILY SOT523 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:482b958ab19b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：2N7002 FAMILY SOT523 T&R 3K
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：343mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1.04 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

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DMN601TKQ-7

Overview

The DMN601TKQ-7 is a 60V N-channel enhancement mode MOSFET in an SOT523 package. It features a maximum drain-source voltage of 60V and continuous drain currents of 343mA at +25°C and 274mA at +70°C. The on-resistance is 2Ω max at VGS=10V and 3Ω max at VGS=5V. Gate threshold voltage ranges from 1.0V to 2.5V. Total gate charge is 1.04nC at VGS=10V. Operating temperature spans -55°C to +150°C.

Feature Summary

AEC-Q101 qualified for automotive reliability
PPAP capable with IATF 16949 manufacturing
ESD protection up to 2kV
Low input capacitance for fast switching

Applications

Motor controls
Power-management functions

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 3,000-unit tape and reel carrier. Confirm that the component meets AEC-Q101 qualification standards if the application requires automotive-grade reliability. Ensure the design accommodates the thermal resistance characteristics specified for the SOT523 package under steady-state conditions.

Selection Notes

Select this component when a compact SOT523 footprint is required for low-current switching applications. The device supports logic-level gate drive with a maximum threshold of 2.5V. Verify that the continuous current requirements do not exceed 343mA at ambient temperatures up to +25°C. Consider the thermal derating curves for operation at higher junction temperatures or elevated ambient conditions.

Part Context

This part belongs to the DMN601 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series includes variants with different packaging options such as SOT-23-6 and PowerDI packages. The TKQ variant specifically denotes the automotive-qualified version designed for high-reliability environments requiring strict change control protocols.