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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.305A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：305mA
- Rds On (Max) @ Id, Vgs：2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
- Power - Max：250mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN601VKQ-7 is a dual N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and operates within a temperature range of -65°C to +150°C. The device provides a continuous drain current (ID) of 305mA at 25°C, with a pulsed current rating of 800mA. Static drain-source on-resistance (RDS(ON)) is specified as a maximum of 2Ω at VGS = 10V and ID = 0.5A, or 3Ω at VGS = 4.5V and ID = 0.2A. Gate threshold voltage (VGS(th)) ranges from 1.0V to 2.5V. Total power dissipation is 250mW, with a thermal resistance junction-to-ambient of 500°C/W. The component is housed in an SOT563 package.
Feature Summary
- Dual N-channel configuration for space-efficient circuit design
- Qualified to AEC-Q101 standards for automotive reliability
- Low on-resistance and low gate threshold voltage for efficient switching
- ESD protection rated up to 2kV
Applications
- General-purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the required tape and reel packaging quantity of 3,000 units. Confirm that the SOT563 package dimensions align with the target PCB footprint. Ensure the application environment remains within the specified -65°C to +150°C operating temperature range to maintain performance integrity.
Selection Notes
Select this component when a compact dual N-channel MOSFET solution is required for automotive or general-purpose applications. The AEC-Q101 qualification makes it suitable for environments demanding high reliability. Consider the 2Ω RDS(ON) at 10V drive when designing logic-level interfaces. The small SOT563 package is ideal for space-constrained designs requiring two independent channels.
Part Context
This part belongs to the DMN601 series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other members of the family but is distinguished by its specific SOT563 surface-mount package. The series is designed to offer low on-state resistance while maintaining fast switching speeds for power management applications.
Replacement Considerations
Check datasheets for alternative dual N-channel MOSFETs in SOT563 packages with comparable BVDSS and RDS(ON) specifications. Verify pinout compatibility, particularly the shared drain configuration typical of this package type, before substituting.
