DMN6022SSD-13

Overview

The DMN6022SSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 60V and a gate-source voltage (VGSS) rating of ±20V. The device provides a continuous drain current (ID) of 6.0A at +25°C ambient temperature, with a pulsed drain current (IDM) capability of 45A. The static drain-source on-resistance (RDS(ON)) is specified as a maximum of 29mΩ at VGS = 10V and 34mΩ at VGS = 6.0V. Total power dissipation (PD) is rated at 1.2W in steady state at +25°C ambient. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration integrated into a single SO-8 package for space-efficient circuit design.
• Optimized low on-state resistance combined with fast switching speed for high-efficiency power management.
• Qualified to AEC-Q101 standards ensuring high reliability for automotive applications.
• Totally lead-free and fully RoHS compliant, containing no intentionally added halogens or antimony.

Applications

• DC-DC Converters
• Power Management Functions
• Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging format when sourcing components. Confirm that the requested units match the manufacturer's standard factory pack quantity requirements. Ensure compliance with the specified moisture sensitivity level and soldering conditions during assembly processes.

Selection Notes

Select this component for designs requiring a compact dual N-channel solution within an SO-8 footprint. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application environment. Consider the gate threshold voltage specifications to ensure compatibility with the intended logic drive voltages.

Part Context

This part belongs to the DMN6022 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product line focuses on minimizing on-state resistance while maintaining superior switching performance. The 'SSD' designation indicates the specific SO-8 surface mount case style utilized for this component variant.

Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers before implementation.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 6.0A at an ambient temperature of +25°C.

Is the device suitable for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the typical total gate charge value?

The typical total gate charge is 14nC when measured at VGS = 4.5V, VDS = 30V, and ID = 6A.