DMN6040SK3Q-13

$0.26

Description：MOSFET BVDSS: 41V-60V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:06902dad6a8c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V-60V TO252 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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DMN6040SK3Q-13

Overview

The DMN6040SK3Q-13 is a 60V N-channel enhancement mode MOSFET in a TO252 (DPAK) package. It features a maximum drain-source on-resistance of 40mΩ at VGS=10V and 20A, or 58mΩ at VGS=4.5V and 16A. The device supports a continuous drain current of 20A at TC=+25°C and 13A at TC=+100°C. Total gate charge is 22.4nC at VGS=10V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Designed for low input capacitance and fast switching speed.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as defined in the manufacturer's documentation. Confirm that the 'Q' designation indicates compliance with IATF 16949 certified facility manufacturing standards required for automotive change control processes.

Selection Notes

Select this component when an N-channel MOSFET with a 60V breakdown voltage and high current handling capability is required. Ensure the application gate drive voltage aligns with the specified RDS(ON) test conditions of 10V or 4.5V. Verify thermal management requirements against the specified power dissipation limits at various case temperatures.

Part Context

This part belongs to the DMN6040SK3 series of 60V N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is engineered to meet stringent automotive reliability standards while providing efficient power switching solutions for compact surface-mount designs.

Replacement Considerations

Consult official cross-reference lists from Diodes Incorporated for verified substitutes. Ensure any replacement maintains AEC-Q101 qualification if automotive usage is intended.