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The DMN6040SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60 V and a continuous drain current of 5.5 A at 25°C. The device exhibits a maximum on-resistance of 40 mΩ at VGS = 10V and 55 mΩ at VGS = 4.5V. Packaged in an SO-8 case, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance standards relevant to the target market. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Review the datasheet for any updates regarding mechanical dimensions or thermal characteristics before finalizing integration.
Select this component when a single N-channel MOSFET with a 60 V rating and low on-resistance is required. Consider the SO-8 package constraints for thermal dissipation and board space. Evaluate the gate threshold voltage and total gate charge against the driving circuit capabilities to ensure optimal switching speed and efficiency.
This part belongs to the DMN6040 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose power switching applications requiring robust performance in compact surface-mount packages. The series offers various configurations to suit different current and voltage requirements.
Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions carefully. Verify compatibility with existing thermal management solutions and drive circuits before implementing any substitute components.
The maximum continuous drain current is 5.5 A at an ambient temperature of 25°C.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The typical input capacitance is 1287 pF under specified test conditions.