DMN6040SSS-13

DMN6040SSS-13

$0.23
  • Description:MOSFET N-CH 60V 5.5A 8SO
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:5360b09634b7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 5.5A 8SO
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:40mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1287 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-SO
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

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DMN6040SSS-13

Overview

The DMN6040SSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 60 V and a continuous drain current of 5.5 A at 25°C. The device exhibits a maximum on-resistance of 40 mΩ at VGS = 10V and 55 mΩ at VGS = 4.5V. Packaged in an SO-8 case, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
  • Qualified to AEC-Q101 standards for high reliability requirements.
  • Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance standards relevant to the target market. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Review the datasheet for any updates regarding mechanical dimensions or thermal characteristics before finalizing integration.

Selection Notes

Select this component when a single N-channel MOSFET with a 60 V rating and low on-resistance is required. Consider the SO-8 package constraints for thermal dissipation and board space. Evaluate the gate threshold voltage and total gate charge against the driving circuit capabilities to ensure optimal switching speed and efficiency.

Part Context

This part belongs to the DMN6040 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose power switching applications requiring robust performance in compact surface-mount packages. The series offers various configurations to suit different current and voltage requirements.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions carefully. Verify compatibility with existing thermal management solutions and drive circuits before implementing any substitute components.

FAQ

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 5.5 A at an ambient temperature of 25°C.

Is the device qualified for automotive applications?

Yes, the device is qualified to AEC-Q101 standards for high reliability.

What is the typical input capacitance?

The typical input capacitance is 1287 pF under specified test conditions.

DMN6040SSS-13DMN6040SSS-13
$0.23
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