DMN6040SSSQ-13

$0.14

Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:29366304165d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SO-8 T&R 2
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMN6040SSSQ-13

Overview

The DMN6040SSSQ-13 is a dual N-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of 60V and a continuous drain current of 5.5A at 25°C. The maximum on-resistance is 40mΩ at VGS=10V and 55mΩ at VGS=4.5V. Total gate charge is 22.4nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Manufactured in IATF 16949 certified facilities for specific change control requirements.
Includes 100% Unclamped Inductive Switch (UIS) testing during production.

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the complete part number includes the suffix '-13' to confirm tape and reel packaging containing 2500 units per carrier. Confirm that the component meets RoHS, Halogen-free, and Antimony-free standards as specified by Diodes Incorporated. Ensure the design accommodates the SO-8 package dimensions and thermal characteristics provided in the datasheet.

Selection Notes

Select this component for designs requiring dual N-channel MOSFETs in an SO-8 footprint. The device supports high-current switching with low on-resistance. Verify that the application environment aligns with the specified operating temperature range and thermal resistance values. Consider the package material and moisture sensitivity level for assembly processes.

Part Context

This component belongs to the DMN6040 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed for general-purpose switching and power management applications. The specific model utilizes an SO-8 package configuration suitable for surface-mount technology.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers within the same series or equivalent specifications. Cross-referencing requires matching electrical parameters and package type.