DMN6040SVTQ-7

$0.79

Description：MOSFET N-CH 60V 5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3b2463ff0dd0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：44mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.4 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1287 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Download product information

DMN6040SVTQ-7

Overview

The DMN6040SVTQ is a 60V N-Channel Enhancement Mode MOSFET in a TSOT26 package. It features a maximum drain-source on-resistance of 44mΩ at VGS=10V and 60mΩ at VGS=4.5V. The device supports a continuous drain current of 5.0A at TA=+25°C (VGS=10V) and 4.3A at VGS=5V. Key electrical parameters include a gate threshold voltage range of 1V to 3V, total gate charge of 22.4nC at VGS=10V, and input capacitance of 1,287pF. Thermal characteristics specify a junction-to-ambient resistance of 106°C/W steady state.

Feature Summary

Qualified to AEC-Q101 standards for high reliability with PPAP capability.
100% Unclamped Inductive Switch (UIS) tested in production.
Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Designed for low input capacitance and fast switching speed.

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix when purchasing. The DMN6040SVTQ-7 variant utilizes a 3,000-unit tape and reel packaging format. Confirm that the component meets the required automotive qualification standards if intended for such applications. Ensure the selected part number matches the exact packaging quantity needed for the manufacturing process.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with optimized switching performance. The TSOT26 package provides a small footprint suitable for space-constrained designs. Consider the thermal resistance values when designing heat dissipation strategies for steady-state or transient power dissipation scenarios.

Part Context

This component belongs to the DMN6040 series of N-Channel Enhancement Mode MOSFETs manufactured by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching capabilities. It serves as a discrete semiconductor solution for efficient power management within electronic circuits.