DMN6041SVT-13

DMN6041SVT-13

$0.10
  • Description:MOSFET BVDSS: 41V~60V TSOT26 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:7b1881ad182b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 41V~60V TSOT26 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:4.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:48mOhm @ 4.3A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TSOT-26
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

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DMN6041SVT-13

Overview

The DMN6041SVT-13 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source on-resistance of 48mΩ at VGS=10V and 60mΩ at VGS=4.5V, with continuous drain currents of 4.1A at 25°C and 3.8A at 4.5V gate drive. The device utilizes a TSOT26 package and supports an operating temperature range from -55°C to +150°C.

Feature Summary

  • Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
  • Features low input capacitance and fast switching speed to optimize dynamic operation in DC-DC converters.
  • Manufactured as a totally lead-free and fully RoHS compliant component that is halogen and antimony free.

Applications

  • DC-DC converters
  • Power-management functions
  • Backlighting

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 10,000 units. Confirm that the standard commercial grade meets application requirements, noting that automotive-specific change control requires the Q-suffix variant. Ensure compatibility with JEDEC standards for high reliability if specified in design constraints.

Selection Notes

Select this component when a compact TSOT26 footprint is required for 60V N-channel switching. Evaluate thermal dissipation capabilities against the 138°C/W junction-to-ambient resistance for steady-state conditions. Consider the 4.1A continuous current rating relative to the expected load profile and ambient temperature derating curves provided in the datasheet.

Part Context

This part belongs to Diodes Incorporated's generation of MOSFETs designed to balance low RDS(ON) with fast switching characteristics. It serves as a discrete solution for power management circuits where space efficiency and thermal performance are critical constraints within small surface-mount packages.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Verify pinout and electrical parameters match exactly before substituting any other manufacturer's equivalent.

FAQ

Is the DMN6041SVT-13 qualified for automotive applications?

No, this specific part number is not automotive qualified. For automotive applications requiring specific change control and AEC-Q qualification, you must select the related automotive grade part with the Q-suffix.

What is the maximum junction temperature for this MOSFET?

The maximum operating and storage temperature range (TJ, TSTG) for the DMN6041SVT-13 is -55°C to +150°C.

DMN6041SVT-13DMN6041SVT-13
$0.10
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