DMN6041SVT-7

$0.12

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6e8de12da7d7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V TSOT26 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：48mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1190 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMN6041SVT-7

Overview

The DMN6041SVT-7 is a 60V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage (BVDSS) of 60V and a continuous drain current (ID) of 4.1A at +25°C. The device exhibits a static drain-source on-resistance (RDS(ON)) of 48mΩ max at VGS = 10V and 60mΩ max at VGS = 4.5V. Total gate charge (Qg) is 21nC at VGS = 10V. Thermal resistance from junction to ambient is 138°C/W steady state, with an operating temperature range of -55°C to +150°C.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance and superior switching performance.
Complies with JEDEC standards for high reliability and includes 100% Unclamped Inductive Switch (UIS) testing in production.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

DC-DC converters
Power-management functions
Backlighting

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental directives and quality standards required for the intended deployment environment before finalizing procurement.

Selection Notes

Select this component when a 60V N-channel MOSFET with low RDS(ON) and fast switching characteristics is required. Ensure the application operates within the specified thermal limits and voltage ratings. Consider the TSOT26 package constraints for PCB layout and heat dissipation requirements.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a TSOT26 surface-mount package designed for compact electronic designs. The device is engineered to balance low conduction losses with efficient switching capabilities for modern power management circuits.

Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix as listed in the manufacturer's automotive product documentation.

FAQ

Is the DMN6041SVT-7 qualified for automotive applications?

This specific part is qualified to JEDEC standards for high reliability. For automotive applications requiring AEC-Q qualification and IATF 16949 manufacturing, customers should refer to the related automotive grade parts with the Q-suffix.