DMN6068SEQ-13

$0.53

Description：MOSFET BVDSS: 41V~60V SOT223 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1986279e2c8f Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 41V~60V SOT223 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：68mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：502 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-223-3
Package / Case：TO-261-4, TO-261AA

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DMN6068SEQ-13

Overview

The DMN6068SEQ-13 is a surface-mount N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source voltage rating and an on-resistance of 68mΩ at VGS=10V with a continuous drain current of 5.6A. The device operates within a temperature range of -55°C to +150°C, dissipates up to 2W of power, and utilizes a SOT-223 package.

Feature Summary

Qualified to AEC-Q101 standards and supported by PPAP for automotive use
Manufactured in IATF 16949 certified facilities
Includes 100% Unclamped Inductive Switch (UIS) testing in production

Applications

Motor controls
Transformer driving switches
DC-DC converters
Power-management functions
Uninterrupted power supplies

Procurement Notes

Verify the specific 'SEQ' suffix against official Diodes Incorporated documentation to confirm automotive qualification status and manufacturing origin. Ensure that the required AEC-Q101 compliance and PPAP support align with your project specifications before procurement.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade reliability and high switching performance. Consider its low on-resistance and fast switching characteristics for efficient power management in motor control or DC-DC converter topologies.

Part Context

This part belongs to the DMN6068 series of N-channel MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive industry requirements, distinguishing it from standard commercial variants through rigorous quality certifications and testing protocols.

Replacement Considerations

Consult official Diodes Incorporated substitution guides for verified alternatives. Do not assume functional equivalence with other 60V N-channel MOSFETs without verifying pinout compatibility and electrical parameter alignment.